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| BF 506 PNP Silicon RF Transistor q BF 506 For VHF mixer and oscillator stages 2 1 3 Type BF 506 Marking - Ordering Code Q62702-F534 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 45 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 35 40 4 30 5 300 150 - 55 ... + 150 Unit V mA mW C 350 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BF 506 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 2 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 20 V DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency IC = 2 mA, VCE = 10 V, f = 100 MHz Collector-emitter capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 2 mA, VCB = 10 V, f = 200 MHz RS = 60 fT Cce F - - - 550 0.12 3 - - - MHz V dB V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 35 40 4 - 25 - - - - - - - - 100 - nA - V Values typ. max. Unit Semiconductor Group 2 |
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